Beilstein J. Nanotechnol.2023,14, 1085–1092, doi:10.3762/bjnano.14.89
implied the formation of single-phase oxide in the films grown at temperatures above 300 °C. Appropriateness of the mentioned precursor system to the preparation of SnO2 films was established.
Keywords: atomic layer deposition; tin oxide; tintetraiodide; Introduction
Atomic layer-deposited SnO2 films
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Figure 1:
Dependence of SnO2 film GPC on the evaporation temperature of the SnI4 precursor. The cycle times w...